| PART |
Description |
Maker |
| KM48S16030T-G_FH |
4M x 8Bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4S640832D K4S640832D-TC_L10 K4S640832D-TC_L1H K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S560832B K4S560832B-TC_L1H K4S560832B-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4S640832C K4S640832C-TC_L1L K4S640832C-TC_L70 K4S |
64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S160822D K4S160822DT-G_FL K4S160822DT-G_F10 K4S1 |
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K4S510732C |
16M x 8Bit x 4 Banks Synchronous DRAM Data Sheet
|
Samsung Electronic
|
| K4S560832A K4S560832A-TC_L1H K4S560832A-TC_L1L K4S |
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
IC,SDRAM,4X8MX8,CMOS,TSOP,54PIN,PLASTIC
|
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4S160822DT-G/F10 K4S160822DT-G/F7 K4S160822D K4S1 |
2M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO44
2Mx8 SDRAM 1M x 8bit x 2 Banks Synchronous DRAM LVTTL
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| KM48S16030B KM48S16030BT-G_F10 KM48S16030BT-G_F8 K |
128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL 128Mbit SDRAM4米8位4银行同步DRAM LVTTL
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54 0.400 X 0.875 INCH, 0.80 MM PITCH, TSOP2-54
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Electronic Theatre Controls, Inc.
|
| K4E640812B K4E660812B K4E640812B-JC-45 K4E640812B- |
8M x 8bit CMOS dynamic RAM with extended data out, 45ns
8M x 8bit CMOS dynamic RAM with extended data out, 50ns
8M x 8bit CMOS dynamic RAM with extended data out, 60ns
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
